AII-BVI Compounds: CdSe

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AII-BVI Compounds: CdSe

Description

CdSe is a compound consisting of cadmium (Cd) and selenium (Se). It is a II-VI semiconductor with a direct bandgap of 1.7 eV at room temperature. CdSe has a zincblende crystal structure and is a widely used material in optoelectronic devices such as solar cells, photodetectors, and light-emitting diodes (LEDs). CdSe quantum dots, which are nanocrystals of CdSe, are also used in various applications including bioimaging, sensing, and quantum computing.

Specification

Material	CdSe
Growth methods:	Vertical Bridgman
Diameter, mm	40
Thickness, mm	30
Optical absorption (bulk) at 10,6 nm, cm^-1	< 0.0015
Resistivity, Ohm x cm	-
Luminescent emission intensity ration, I_Ex/I_edge (I_imp)	-
Dislocation density, cm^-2	-
Small-angle boundary density, cm^-1	-
Excition band wavelength in luminescence spectrum, nm	690 ± 2
The variation of local values for wavelength within the plate, nm	-
The number of cavities with size of 15 - 200 m, pcs/pl	-

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