AII-BVI Compounds: CdTe

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AII-BVI Compounds: CdTe

Description

CdTe is a binary compound of cadmium and tellurium, with the chemical formula CdTe. It is a direct bandgap semiconductor with a bandgap energy of 1.44 eV at room temperature, which makes it a promising material for photovoltaic solar cells and other optoelectronic devices. CdTe is also used in the production of radiation detectors, infrared optics, and high-temperature thermoelectric devices. Additionally, CdTe is used as a substrate for the growth of other semiconductors, such as HgCdTe for infrared detectors.

Specification

Material	CdTe
Growth methods:	melt
Diameter, mm	80
Thickness, mm	30
Optical absorption (bulk) at 10,6 nm, cm^-1	5-10 x 10^-4
Resistivity, Ohm x cm	5-50x10⁹
Luminescent emission intensity ration, I_Ex/I_edge (I_imp)	-
Dislocation density, cm^-2	-
Small-angle boundary density, cm^-1	-
Excition band wavelength in luminescence spectrum, nm	-
The variation of local values for wavelength within the plate, nm	-
The number of cavities with size of 15 - 200 m, pcs/pl	-

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