Description

InSb is a single crystal belonging to the A3B5 group of compounds. It has a zinc blende crystal structure and is a semiconductor with a narrow bandgap of 0.17 eV at room temperature. InSb has a high electron mobility and is commonly used in infrared detectors and photovoltaic cells operating in the mid-infrared spectral range. It is also used in high-speed electronics and spintronic devices due to its unique electronic properties. InSb is grown using techniques such as liquid-phase epitaxy (LPE) and molecular beam epitaxy (MBE).
| Substrates | InSb | 
| Resistivity, om.cm | - | 
| Dia | - | 
| Orientation | (100), (111) | 
| Carrier Concentration, cm-3 | (8 - 30) x 1013 | 
| Mobility, cm2/V.Sec | - | 
| Grown technology | dopants are possible | 
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